2

Conditions for the suppression of void formation during ion-bombardment

Year:
1984
Language:
english
File:
PDF, 321 KB
english, 1984
4

Phase transformations in ion irradiated Ti-6242s alloys

Year:
1987
Language:
english
File:
PDF, 1.60 MB
english, 1987
5

Radiation induced precipitation in 9 MeV Al ion irradiated Ti-6A1-4V

Year:
1987
Language:
english
File:
PDF, 1.61 MB
english, 1987
11

A low on-resistance, high-current GaAs power VFET

Year:
1995
Language:
english
File:
PDF, 344 KB
english, 1995
15

Implant and annealed ohmic contact to a thin quantum well

Year:
1989
Language:
english
File:
PDF, 560 KB
english, 1989
17

Planar heterojunction bipolar transistor with an implanted base

Year:
1989
Language:
english
File:
PDF, 334 KB
english, 1989
18

AlGaAs/GaAs emitter-down HBT fabricated by MBE overgrowth

Year:
1989
Language:
english
File:
PDF, 287 KB
english, 1989
20

Tungsten Silicide Zinc as a High Temperature Zinc Diffusion Source

Year:
1987
Language:
english
File:
PDF, 359 KB
english, 1987
21

A Two Step Rapid Thermal Annealing Process for Be Implant Activation in GaAs

Year:
1987
Language:
english
File:
PDF, 357 KB
english, 1987